Reviews
The half bridge circuit comprises a low end drive module (110) and a high end drive module (210) for driving each lower transistor (T1) and upper transistor (T2). Each drive module (110, 210) is a charge capture circuit, in which the low end drive module (110) drives the low end transistor (T1) with the charge on the capacitive load (c), and the high end drive module (210) charges the capacitive load (c) alternately when it is driven by a high voltage source. Each charge capture line (110210) also includes diode elements (D1, D2) to prevent unintentional charge consumption on the gates of the driven transistors (T1, T2), and Zener Diodes (Z1, Z2) to clamp the gate voltage to a safe level. In this way, the half bridge circuit is driven efficiently without auxiliary power supply.
Highlights
Features and advantages

1. High surge current

2. Simple erection

3. Non segregated. Mounting base as common anode terminal

application area

1. Welding power source

2. All kinds of DC power supply
Details
Half bridge circuit

1. Upper transistor

The common T2 shows that it has a source connected to the output (120) and a drain connected to the rail (130) to add high DC voltage;

2. Lower transistor

The common T1 shows that it has a source connected to the rail (140) to add low DC voltage, and a drain connected to the output (120);

Main components

The upper transistor control circuit (HS) is used to drive the upper transistor (T2) by adding a signal to the control end of the upper transistor (T1); and the lower transistor control circuit (110) is used to drive the lower transistor (T1) by adding a signal to the control end of the lower transistor (T1). The lower transistor control circuit (110) comprises: a third transistor (T3) with a drain connected to the output end (120), and a source connected to the anode of the diode element (D1), with the cathode of the diode element (D1) connected to the control end of the lower transistor (T1); and a fourth transistor (T4) with a drain connected to the control end of the lower transistor (T1), and a control circuit with the source connected to the anode of the diode element (D1) A standby source is connected to a rail (140) for adding a low DC voltage.
The above is the explanation of the bridge arm thyristor module by the thyristor module manufacturer semipower. semipower is a power semiconductor power module supplier with power electronics technology as its professional field. It provides the formulation, production and processing of semiconductor power modules for various enterprises and companies. In addition, it also provides the processing business of supplied materials or OEM for various companies. The main products are: IGBT module, thyristor module (SCR) module, ultra fast recovery epitaxial diode module, single-phase rectifier bridge module, three-phase rectifier bridge module, rectifier diode module, Schottky diode component power module and other power semiconductor electronic components.
Products

Product

Product Status

VDRMVRRM

ITAV IFAV
 
 

TC

 
 

ITSM IFSM
 
 

V(T0)@Tvj max

 
 

Packages

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