Basic working principle of fast recovery diode module
Because the main active area of PD is the barrier area, broadening the barrier area can improve the sensitivity. In fact, the p-i-n junction fast recovery diode module is actually to extend the barrier area width of p-n junction artificially, that is, to select a wider intrinsic semiconductor (I) layer instead of the barrier region, and then change to p-i-n junction.
The figure is a waveform of reverse recovery current. In the figure, if is the forward current, IRM is the maximum reverse recovery current, and IRR is the reverse recovery current. Generally, IRR = 0.1irm is specified. When t ≤ T0, the forward current I = if. When t > T0, because the forward voltage on the rectifier tube suddenly becomes the reverse voltage, the forward current decreases rapidly. At t = T1, I = 0. Then the reverse current IR on the rectifier increases gradually and reaches the maximum reverse recovery current IRM at t = T2. After that, under the action of forward voltage, the reverse current gradually decreases and reaches the specified value IRR at t = T3. The reverse recovery process from T2 to T3 is similar to the discharge process of capacitor. The time interval from T1 to T3 is the reverse recovery time TRR. The figure is a waveform of reverse recovery current. In the figure, if is the positive current, IRM is the maximum reverse recovery current, and IRR is the reverse recovery current. Generally, IRR = 0.1irm. When t ≤ T0, the positive current I = if. When t > T0, because the positive direction voltage on the rectifier tube suddenly changes into the reverse direction voltage, the positive direction current decreases rapidly. At t = T1, I = 0. Then, the reverse current IR on the rectifier increases slowly and reaches the maximum reverse recovery current IRM when t = T2. Then, under the action of positive voltage, the reverse current decreases slowly and reaches the specified value IRR when t = T3. The reverse recovery process from T2 to T3 is similar to the discharge process of capacitor. The interval time from T1 to T3 is the reverse recovery time TRR.
Generally speaking, the positive voltage drop of the fast recovery diode module is small, about 0.4V, while the general silicon tube is about 0.6V. In order to reduce the loss, the fast recovery diode module is used.
If the reverse direction breakdown voltage of the fast recovery diode module is 40V, it can be quickly recovered after the reverse direction breakdown; if the reverse direction breakdown voltage of the fast recovery diode module is 1000V, there will be no reverse direction breakdown problem, so this point does not need to be considered in the DC circuit
Semipower is a fast recovery diode module manufacturer. It is a power semiconductor module manufacturer in the professional field of power electronics. It provides customization, production and processing of power semiconductor modules for many enterprises and companies. At the same time, it also provides OEM or OEM business for many companies. The main products are insulated and non insulated power semiconductor modules in various packaging forms, various standard and non-standard power semiconductor modules, etc.
