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In the main industrial production, due to the increasing scale of equipment volume, the on-off working voltage and on-state current of power devices which play a key role in energy conversion are limited by the existing power semiconductor design ability, which makes people study from the inverter topology level to meet the main needs. This topology has been widely used in major industrial production.

Compared with the general two-level inverter, the three-level inverter has the following characteristics:

(1) Under the specific condition of DC bus voltage, the compression rating of switching elements is reduced by half;

(2) At the same switching frequency, the harmonic component of the output voltage of the three-level inverter is reduced by 50%;

(3) The output power can be doubled by using the same power level switch element.

The internal structure of the single tube module is composed of several IGBT modules connected in parallel to achieve the required current specification, which can be regarded as a single tube of IGBT module with large current specification. Due to the limitation of mechanical strength and thermal resistance, the area of IGBT module can not be too large. IGBT module with large current specification needs to install multiple chips on a metal substrate. The equivalent circuit on the external label of the single transistor module is shown in Figure 1 below. The secondary emitter (the second emitter) is connected to the grid drive circuit, and the main emitter is connected to the main circuit.

Figure 1 equivalent circuit of internal structure of single tube module

When multiple chips are connected in parallel, the grid resistance has been added to the grid. The main equivalent circuit is shown in Figure 2. The resistance of the first mock exam is not the same as that of the various manufacturers, but the resistance of the same structure is the same.


Figure 2 main equivalent circuit diagram of internal structure of single tube module

In the first mock exam, the IGBT module is called 1IN1 module. The front 1 IGBT contains 1 IGBT modules, and the latter is the same module.

The above is the introduction of a unit IGBT module by inheritance electronics designer. Inheritance electronics is a power semiconductor module manufacturer with power electronics technology as its professional field. It supplies the formulation, manufacturing and processing of power semiconductor modules for enterprises and companies. In addition, it also supplies the OEM production or OEM processing business for companies. The main products are: IGBT module, thyristor (thyristor) module, ultra fast recovery epitaxial diode module, single-phase rectifier bridge module, three-phase rectifier bridge module, rectifier diode module, Schottky diode module and other power semiconductor components.